I-diode ekhupha ukukhanya yi-diode ekhethekileyo. Njengeediode eziqhelekileyo, ii-diode ezikhupha ukukhanya zenziwe ngeechips ze-semiconductor. Ezi zixhobo ze-semiconductor zifakwe kwangaphambili okanye zifakwe kwi-doped ukuvelisa izakhiwo ze-p kunye ne-n.
Njengezinye iidiode, i-current in the diode-emitting diode inokuhamba ngokulula ukusuka kwi-p pole (anode) ukuya kwi-n pole (cathode), kodwa kungekhona kwelinye icala. Abathwali ababini abahlukeneyo: imingxuma kunye nee-electron zihamba ukusuka kwi-electrode ukuya kwi-p kunye nezakhiwo ze-n phantsi kwee-electrode ezahlukeneyo. Xa imingxuma kunye nee-electron zidibana kwaye ziphinde zihlangane, ii-electron ziwela kwinqanaba eliphantsi lamandla kwaye zikhulule amandla ngendlela yeefotoni (iifotoni yinto esihlala siyibiza ngokuba ukukhanya).
Ubude be-wavelength (umbala) wokukhanya okukhutshwayo kumiselwa ngamandla e-bandgap yezixhobo ze-semiconductor ezenza i-p kunye ne-n izakhiwo.
Ekubeni i-silicon kunye ne-germanium zizinto ze-bandgap ezingathanga ngqo, kwiqondo lokushisa lokushisa, ukudityaniswa kwakhona kwee-electron kunye nemingxuma kwezi zixhobo ziyinguqu engabonakaliyo. Utshintsho olunjalo alukhuphi iifotoni, kodwa luguqula amandla kumandla obushushu. Ngoko ke, i-silicon kunye ne-germanium diodes ayikwazi ukuvelisa ukukhanya (ziya kukhipha ukukhanya kumaqondo okushisa aphantsi kakhulu, okufuneka kubonwe kwi-angle ekhethekileyo, kwaye ukukhanya kokukhanya akubonakali).
Izinto ezisetyenziswa kwii-diode ezikhupha ukukhanya zizo zonke izinto ezithe ngqo ze-bandgap, ngoko ke amandla akhululwa ngendlela yeefotoni. La mandla ebhendi awavumelekanga ahambelana namandla okukhanya kwi-infrared, ebonakalayo, okanye i-ultraviolet bands.
Le modeli ilinganisa i-LED ekhupha ukukhanya kwindawo ye-infrared ye-electromagnetic spectrum.
Kwinqanaba lokuqala lophuhliso, ii-diode ezikhupha ukukhanya usebenzisa i-gallium arsenide (GaAs) zinokukhupha kuphela ukukhanya kwe-infrared okanye okubomvu. Ngokuhambela phambili kwenzululwazi yemathiriyeli, iidiode ezisanda kuphuhliswa ezikhupha ukukhanya zinokukhupha amaza okukhanya anezandi eziphakamileyo neziphezulu. Namhlanje, iidiode ezikhupha ukukhanya ezinemibala eyahlukahlukeneyo zinokwenziwa.
I-Diodes ivame ukwakhiwa kwi-substrate yohlobo lwe-N, kunye noluhlu lwe-P-type semiconductor efakwe phezu kwayo kwaye idibene kunye ne-electrodes. Ii-substrates zodidi lwe-P azixhaphakanga kangako, kodwa zikwasetyenziswa. Iidiode ezininzi zorhwebo ezikhupha ukukhanya, ngakumbi i-GaN/InGaN, nazo zisebenzisa i-sapphire substrates.
Uninzi lwezixhobo ezisetyenziselwa ukwenza ii-LED zinezikhombisi eziphezulu kakhulu zokuphinda zisebenze. Oku kuthetha ukuba uninzi lwamaza okukhanya lubonakaliswa umva kwisixhobo sojongano kunye nomoya. Ke ngoko, ukutsalwa kwamaza okukhanya sisihloko esibalulekileyo kwii-LED, kwaye uninzi lophando kunye nophuhliso lugxile kwesi sihloko.
Umahluko omkhulu phakathi kwee-LED (ii-diode ezikhupha ukukhanya) kunye ne-diode eziqhelekileyo zizinto zabo kunye nokwakheka, okukhokelela ekuhlukeni okukhulu ekusebenzeni kwabo ekuguquleni amandla ombane kumandla okukhanya. Nanga amanye amanqaku aphambili okuchaza ukuba kutheni ii-LED zinokukhupha ukukhanya kwaye iidiode eziqhelekileyo azikwazi:
Izixhobo ezahlukeneyo:Ii-LED zisebenzisa izixhobo ze-semiconductor ze-III-V ezifana ne-gallium arsenide (GaAs), i-gallium phosphide (GaP), i-gallium nitride (i-GaN), njl. Ezi zixhobo zine-bandgap ngqo, ezivumela ukuba ii-electron zigxume ngokuthe ngqo kwaye zikhulule iifotoni (ukukhanya). Iidiode eziqhelekileyo zisebenzisa i-silicon okanye i-germanium, ene-bandgap engathanga ngqo, kwaye ukutsiba kwe-electron kwenzeka ikakhulu ngendlela yokukhutshwa kwamandla obushushu, kunokukhanya.
Ulwakhiwo olwahlukileyo:Ubume bee-LED zenzelwe ukukhulisa ukukhanya kunye nokukhutshwa. Ii-LED zihlala zongeza i-dopants ezithile kunye nezakhiwo zomaleko kwi-pn junction ukukhuthaza isizukulwana kunye nokukhululwa kweefotoni. Iidiode eziqhelekileyo zenzelwe ukunyusa umsebenzi wokulungiswa kwangoku kwaye ungagxininisi kwisizukulwana sokukhanya.
Ibhendi yamandla:Izinto eziphathekayo ze-LED zinamandla amakhulu e-bandgap, oku kuthetha ukuba amandla akhutshwe ngama-electron ngexesha lokutshintsha aphakamileyo ngokwaneleyo ukuba avele ngendlela yokukhanya. I-bandgap yezinto zamandla ee-diode eziqhelekileyo zincinci, kwaye ii-electron zikhutshwa ikakhulu ngendlela yobushushu xa ziguquka.
Indlela yokukhanya:Xa i-pn junction ye-LED iphantsi kwe-bias yangaphambili, ii-electron zihamba ukusuka kummandla we-n ukuya kummandla we-p, zidibanisa kunye nemingxuma, kwaye zikhulule amandla ngendlela yeefotoni ukuvelisa ukukhanya. Kwiidiode eziqhelekileyo, ukudityaniswa kwakhona kwee-electron kunye nemingxuma ngokuyininzi kwindlela yokudibanisa i-non-radiative recombination, oko kukuthi, amandla akhululwa ngendlela yokushisa.
Lo mahluko uvumela ii-LED ukuba zikhuphe ukukhanya xa zisebenza, ngelixa ii-diodes eziqhelekileyo zingakwazi.
Eli nqaku livela kwi-Intanethi kwaye i-copyright yeyombhali wokuqala
Ixesha lokuposa: Aug-01-2024